TA1钛合金阳极氧化膜复合FeOOH后的光电及半导体特性研究

胡继月, 来龙杰, 汪瑞, 王立鹏, 刘琪

doi:10.16577/j.issn.1001-1560.2024.0010

材料保护 >

2024 , Vol. 57 >Issue 1: 65 - 72

DOI: https://doi.org/10.16577/j.issn.1001-1560.2024.0010

研究篇

TA1钛合金阳极氧化膜复合FeOOH后的光电及半导体特性研究

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安徽工程大学材料科学与工程学院

刘琪(1980-)，博士，教授，主要从事光催化和光电催化的研究工作，电话:0553-2871738，E-mail: modieer_67＠ahpu.edu.cn

收稿日期: 2023-02-23

修回日期: 2023-04-27

录用日期: 2023-05-10

网络出版日期: 2024-01-30

基金资助

安徽省自然基金面上项目(2008085ME132)；安徽省高校杰出青年基金项目(2022AH020064)资助

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Study on Photoelectric and Semiconductor Characteristics of Anodic Oxide Film with FeOOH on TA1 Titanium Alloy

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(School of Material Science and Engineering，Anhui Polytechnic University，Wuhu 241000，China)

LIU Qi(1980-)，Ph.D.，Professor，Research Focus: Photocatalysis and Photoelectrochemical Reactions，Tel.:0553-2871738，E-mail: modieer_67＠ahpu.edu.cn

Received date: 2023-02-23

Revised date: 2023-04-27

Accepted date: 2023-05-10

Online published: 2024-01-30

Supported by

Anhui Provincial Natural Science Foundation Project (No.2008085ME132)；Anhui Provincial University Outstanding Youth Fund Project (2022AH020064)

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摘要

为了在提高钛合金表面性能的同时，又可赋予其多彩的外观或实现消光等目的，利用直流脉冲稳压电源在不同氧化电压下制备钛合金阳极氧化膜。采用化学浴沉积法在钛合金阳极氧化膜层表面沉积适量羟基氧化铁(FeOOH)颗粒，研究FeOOH 对钛合金阳极氧化膜层光学及半导体性能的影响。采用扫描电镜(SEM)、X 射线衍射仪(XRD)、EDS、电化学工作站分析测试了氧化膜及复合FeOOH 后膜层的形貌、物相、元素组成、光电流密度、电化学阻抗和Mott-Schottky 曲线。结果表明:在电压为40 V 时，钛合金阳极氧化膜具有优异的光学及半导体性能。在40 V 电压下生长的阳极氧化膜表面复合FeOOH 可显著提高其光电流密度，使其电荷转移电阻明显减小，迁移速度变得更快，光学性能得到明显改善。

关键词： 钛合金阳极氧化; 光电性能; 半导体特性; 羟基氧化铁; 光阳极

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胡继月, 来龙杰, 汪瑞, 王立鹏, 刘琪 . TA1钛合金阳极氧化膜复合FeOOH后的光电及半导体特性研究[J]. 材料保护, 2024 , 57(1) : 65 -72 . DOI: 10.16577/j.issn.1001-1560.2024.0010

Abstract

For improving the surface properties of titanium alloys while also giving them a colorful appearance or achieving extinction，the anodized films on titanium alloy were prepared by using DC pulse stabilized power supply under different oxidation voltages.Subsequently，a chemical bath deposition method was used to deposit an appropriate amount of FeOOH particles on the surface of the titanium alloy anodized films，and the effect of FeOOH on the optical and semiconductor properties of the titanium alloy anodized films were analyzed.Scanning electron microscope (SEM)，X-ray diffractometer (XRD)，EDS，and electrochemical workstation were used to study and test the morphology，physical phase，elemental composition，photocurrent density，electrochemical impedance and Mott-Schottky curves of the oxide films with and without FeOOH.Results showed that the anodic oxide film on titanium alloy had excellent optical properties and semiconductor properties，when the voltage was 40 V.The FeOOH on the surface of the anodic oxide film obtained at 40 V could significantly increase its photocurrent density，and significantly reduce its charge transfer resistance，which could weaken the charge transfer resistance，accelerate the migration speed，and improve the optical properties obviously.

Key words： titanium anodizing; photoelectric properties; semiconductor characteristics; FeOOH; light anode

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