镶嵌靶磁控溅射Cu-W薄膜的结构与力学性能

郭中正, 闫万珺, 张殿喜, 杨秀凡, 蒋宪邦, 周丹彤

doi:10.16577/j.issn.1001-1560.2024.0069

材料保护 >

2024 , Vol. 57 >Issue 3: 166 - 174

DOI: https://doi.org/10.16577/j.issn.1001-1560.2024.0069

工艺篇

镶嵌靶磁控溅射Cu-W薄膜的结构与力学性能

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(安顺学院电子与信息工程学院，贵州安顺561000)

郭中正(1983-), 博士, 副高, 主要研究方向为金属薄膜材料，电话：13987140435, E-mail: 1982gzz@163.com

网络出版日期: 2024-03-19

基金资助

贵州省教育厅青年科技人才成长项目(非混溶体系铜-钨薄膜结构均质化机理及力学行为研究,黔教合KY字[2019]145号);贵州省教育厅青年科技人才成长项目(相场法模拟单晶硅、多晶硅晶体生长机理与应用,黔教合KY字[2020]134号);贵州省科技计划项目(飞机起落架用高性能TC18合金防扭臂模锻成型关键技术研发,黔科合支撑[2023]一般278)资助

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Structures and Mechanical Properties of Cu-W Thin Films Deposited by Mosaic Target Magnetron Sputtering

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(School of Electronics and Information Engineering, Anshun University, Anshun 561000, China)

GUO Zhongzheng (1983-), Ph.D., Associate Professor, Research Focus: Metal Thin Film Materials. Tel.: 13987140435, E-mail: 1982gzz@163.com

Online published: 2024-03-19

Supported by

The Youth Science and Technology Talent Development Project of Guizhou Provincial Education Department (Study on the Homogenization Mechanism and Mechanical Behavior of Immiscible Copper-Tungsten Systems Thin Films, KY[2019]145);The Youth Science and Technology Talent Development Project of Guizhou Provincial Education Department (The Growth Mechanism and Application of Single Crystal and Polycrystalline Silicon Simulated by Phase Field Method, KY[2020]134);The Science and Technology Plan Project of Guizhou Province (Research and Development of Key Technologies for Die Forging High Performance TC18 Alloy Anti-torsion Arms for Aircraft Landing Gears, Qianhe Support[2023] General 278)

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摘要

为研究W含量对Cu-W薄膜的结构与力学性能的影响，用磁控溅射工艺制备Cu-W薄膜，靶材为镶嵌组合型。薄膜的成份、结构、表面形貌分别选用能谱仪(EDS)、X射线衍射仪(XRD)和高分辨透射电镜(HRTEM)、扫描电镜(SEM)及原子力显微镜(AFM)进行表征。薄膜屈服强度σ_0.2和裂纹萌生临界应变ε_c、弹性模量E及显微硬度H分别用微小力测试系统和纳米压痕仪进行测试。结果表明，调整W靶的面积占比即可控制薄膜成分，当W靶的面积占比从5%增至25%时，Cu-W薄膜的W含量(原子分数)从2.30%逐渐提高到15.10%,且薄膜中存在fcc Cu(W)亚稳准固溶体。随W含量的增加，Cu-W薄膜的平均晶粒尺寸从28 nm逐渐减小至18 nm,准固溶度从1.30%(原子分数)W逐渐增至9.50%W,薄膜的表面光洁度提高。随W含量的增加，Cu-W薄膜的屈服强度σ_0.2和显微硬度H提高较为明显，弹性模量E稍有增加，而裂纹萌生临界应变ε_c则减小。Cu-15.10%W薄膜具有最小的平均晶粒尺寸和最高的表面光洁度，其屈服强度、硬度及弹性模量值最高(σ_0.2=0.86 GPa、H=6.1 GPa、E=123.5 GPa),裂纹萌生临界应变ε_c值为0.84%,综合力学性能最好。

关键词： 磁控溅射; Cu-W薄膜; 结构; 力学性能

本文引用格式

郭中正, 闫万珺, 张殿喜, 杨秀凡, 蒋宪邦, 周丹彤 . 镶嵌靶磁控溅射Cu-W薄膜的结构与力学性能[J]. 材料保护, 2024 , 57(3) : 166 -174 . DOI: 10.16577/j.issn.1001-1560.2024.0069

Abstract

In order to study the effects of W content on the structure and mechanical properties of Cu-W thin films, these films were prepared by magnetron sputtering process using mosaic combination targets. The composition, structure and surface morphology of the thin films were characterized, respectively, by energy dispersive spectroscopy(EDS), X-ray diffraction(XRD), high-resolution transmission electron microscope(HRTEM), scanning electron microscope(SEM) and atomic force microscope(AFM). The yield strength(σ_0.2), critical strain for crack initiation(ε_c), elastic modulus(E) and microhardness(H) of the thin films were tested using micro-force testing system and nano indentation instrument, respectively. Results showed that the composition of the thin films could be controlled by adjusting the proportion of the W target area. When the proportion of the W target area was increased from 5% to 25%, the W content in the Cu-W thin films was observed to gradually increase from 2.30%(atomic fraction, the same below) to 15.10%, accompanied by the formation of an fcc Cu(W) metastable quasi-solid solution. As the W content increased, the average grain size of the Cu-W thin films was seen to gradually decrease from 28 nm to 18 nm, the quasi-solid solubility was noted to gradually increase from 1.30%W to 9.50%W, and an improvement in the surface smoothness of the thin films was recorded. With the increase of W content, it was found that the yield strength(σ_0.2) and microhardness(H) of the Cu-W thin films increased significantly, the elastic modulus exhibited a slight increase, while the critical strain for crack initiation(ε_c) experienced a decrease. The Cu-15.10% W thin film was determined to possess the smallest average grain size and the highest surface smoothness, along with the highest yield strength, hardness and elastic modulus(σ_0.2 = 0.86 GPa, H = 6.1 GPa, E = 123.5 GPa); the critical strain for crack initiation(ε_c) value was 0.84%, indicating the best comprehensive mechanical performance.

Key words： magnetron sputtering; Cu-W thin films; structures; mechanical properties

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