添加剂对Ch Cl-Gl A低共熔溶剂中电沉积铜的影响

刘洋, 郝建军, 尹鸿鹍, 王薪惠

doi:10.16577/j.issn.1001-1560.2024.0265

材料保护 >

2024 , Vol. 57 >Issue 12: 8 - 16

DOI: https://doi.org/10.16577/j.issn.1001-1560.2024.0265

研究篇

添加剂对Ch Cl-Gl A低共熔溶剂中电沉积铜的影响

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1.沈阳理工大学环境与化学工程学院，2.中国兵器工业集团航空弹药研究院有限公司，3.辽沈工业集团有限公司

收稿日期: 2024-05-15

修回日期: 2024-06-28

网络出版日期: 2025-01-14

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Effect of Additives on Electrodeposition of Copper in Ch Cl-Gl A Low Eutectic Solvent

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(1.School of Environmental and Chemical Engineering， Shenyang Ligong University， Shenyang 110159， China；2.Norinco Group Aviation Ammunition Institute， Harbin 150036， China； 3.Liaoshen Industries Group Co.， Ltd.， Shenyang 110045， China)

Received date: 2024-05-15

Revised date: 2024-06-28

Online published: 2025-01-14

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摘要

使用添加剂有助于铜在金属基体上的沉积，以氯化胆碱-冰醋酸(Ch Cl-Gl A)为低共熔溶剂，醋酸铜为主盐，探究抗坏血酸(C6H8O6)、乙二胺四乙酸二钠(EDTA-2Na)、二乙基三胺五乙酸(DTPA)作为添加剂对铁基体表面电沉积铜的影响。采用循环伏安法(CV)和计时电流法(CA)研究电化学行为；采用扫描电镜(SEM)和X 射线衍射仪(XRD)观察分析镀层形貌和成分；采用紫外-可见-近红外分光光度计分析不同添加剂下电沉积液中形成配合物的紫外-可见吸收光谱。结果表明:在Ch Cl-Gl A 中，铜的电沉积为两步氧化还原，第1 步为Cu2＋→Cu＋；第2 步为Cu＋→Cu；3 种添加剂均可促进Ch Cl-Gl A 中铜的沉积，抗坏血酸的效果最佳，可得到性能良好的铜镀层；铜在Ch Cl-Gl A 中的电沉积遵循三维瞬时成核方式且为受扩散控制的不可逆反应，Cu2＋和Cu＋的扩散系数分别为4.003 9×10－7 cm2/s，4.762 7×10－7 cm2/s；以抗坏血酸为添加剂制备的铜结晶晶形为晶粒分明的多边形片状结构，最优结晶面为(111)晶面。添加DTPA、EDTA-2Na、C6H8O6 的铜镀层的平均晶粒尺寸分别为50.71、55.12、52.73 nm，未添加添加剂的铜镀层的平均晶粒尺寸为44.73 nm。

关键词： 电沉积铜; 低共熔溶剂; 添加剂; 循环伏安测试

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刘洋, 郝建军, 尹鸿鹍, 王薪惠 . 添加剂对Ch Cl-Gl A低共熔溶剂中电沉积铜的影响[J]. 材料保护, 2024 , 57(12) : 8 -16 . DOI: 10.16577/j.issn.1001-1560.2024.0265

Abstract

The use of additives facilitates the deposition of copper on metal substrates.In this work，using choline chloride glacial acetic acid(Ch Cl-Gl A) as a low eutectic solvent and copper acetate as the main salt， the effects of ascorbic acid(C6H8O6)， disodium ethylenediamine tetraacetic acid(EDTA-2Na) and diethylenetriaminepentaacetic acid(DTPA) as additives on electrodeposition of copper on iron substrate were investigated.Electrochemical behavior was studied by cyclic voltammetry (CV) and chronoamperometry (CA)； scanning electron microscopy(SEM) and X-ray diffraction(XRD) were used to observe and analyze the morphology and composition of the coating.The UV-visible absorption spectrum of the complex formed in the electrodeposited solution with different additives was analyzed by a UV-Vis-NIR spectrophotometer.Results indicated that in Ch Cl-Gl A， the electrodeposition of copper involved two steps of oxidation-reduction with the first step of Cu2＋→Cu＋and the second step of Cu＋→Cu.All three additives promoted the deposition of copper in Ch Cl-Gl A，and ascorbic acid had the best effect，which could obtain a copper coating with good performance at room temperature.The electrodeposition of copper in Ch Cl-Gl A followed a three-dimensional instantaneous nucleation process and was an irreversible reaction controlled by diffusion.Moreover，the diffusion coefficients of Cu2＋and Cu＋could reach 4.003 9×10－7 cm2/s，4.762 7×10－7 cm2/s，respectively.The copper crystal prepared with ascorbic acid as additive was a polygonal sheet-like structure with distinct grains，and the optimal crystal plane was the (111) crystal plane.Besides，the average grain sizes of the copper layer with additives DTPA，EDTA-2Na and C6H8O6 were 50.71，55.12 and 52.73 nm.The average grain size of the copper layer without additive was 44.73 nm.

Key words： electrodeposited copper; low eutectic solvent; additives; cyclic voltammetry

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